MBE synthesis of InAs/GaAs quantum dots and their characterisation

Author

Mathews, Shay ; Naresh, C. ; Kumar, Sudhakar ; Bhogale, A. ; Kothari, D.C.

Author_Institution

Opto-Electron. Div., SAMEER, Mumbai, India

fYear

2013

fDate

24-26 July 2013

Firstpage

517

Lastpage

519

Abstract

In this paper we present the details of the growth of InAs quantum dots synthesized on GaAs substrates using a Solid-Source Molecular Beam Epitaxy (SS-MBE) system. The grown structures were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM) and low temperature photoluminescence spectrum (LT-PL).By theselection of growth parameters, InAs quantum dots (QDs) were synthesised. A buffer layer of thickness of 250nm was grown on an n+-GaAs(001) substrate. The 2D to 3D transaction of the QDs was monitored with the help of reflection high energy electron diffraction (RHEED).

Keywords

III-V semiconductors; atomic force microscopy; indium compounds; molecular beam epitaxial growth; photoluminescence; reflection high energy electron diffraction; scanning electron microscopy; semiconductor growth; semiconductor quantum dots; AFM; GaAs; InAs-GaAs; RHEED; SEM; SS-MBE; atomic force microscopy; low temperature photoluminescence spectrum; quantum dots; reflection high energy electron diffraction; scanning electron microscopy; size 250 nm; solid-source molecular beam epitaxy system; Erbium; Instruments; AFM; InAs quantum dots (QDs); LT-PL; MBE; RHEED; SEM;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on

Conference_Location

Chennai

Print_ISBN

978-1-4799-1377-0

Type

conf

DOI

10.1109/ICANMEET.2013.6609352

Filename

6609352