Title :
Reliability study on technology trends beyond 20nm
Author :
Amat, Esteve ; Calomarde, Antonio ; Rubio, Albert
Author_Institution :
Electron. Eng. Dept., Univ. Politec. de Catalunya, Barcelona, Spain
Abstract :
In this work, an assessment of different technology trends (planar CMOS, FinFET and III-V MOSFETs) has been carried out in front of some different reliability scenarios (variability and soft errors). The logic circuits based on FinFET devices have presented the best overall behavior, since we have obtained the best performance and variability robustness. Meanwhile, the III-V/Ge-based circuits have shown the best electrical masking in front of soft errors disturbances.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; elemental semiconductors; germanium; integrated circuit reliability; logic circuits; radiation hardening (electronics); semiconductor device reliability; FinFET; Ge; III-V MOSFET; III-V/Ge-based circuits; electrical masking; logic circuits; planar CMOS; reliability; soft errors; technology trends; variability; CMOS integrated circuits; FinFETs; Integrated circuit modeling; Logic circuits; Market research; Performance evaluation; FinFET; III–V devices; SER; Variability;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2013 Proceedings of the 20th International Conference
Conference_Location :
Gdynia
Print_ISBN :
978-83-63578-00-8
