Title :
Flexible AMOLED display driven by amorphous InGaZnO TFTs
Author :
Miura, Kiyotaka ; Ueda, Toshitsugu ; Saito, Nobuo ; Nakano, Shunsuke ; Sakano, Toshikazu ; Sugi, Kaoru ; Yamaguchi, Hitoshi ; Amemiya, Isao
Author_Institution :
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
Abstract :
Threshold voltage shifts of amorphous In-Ga-Zn-Oxide (a-InGaZnO) TFTs on plastic substrates against bias-temperature stress were reduced below 0.03 V, equivalent to those on glass substrates. We have developed 10.2-inch WUXGA (1920×1200) flexible bottom-emission active-matrix organic light-emitting diode (AMOLED) driven by a-InGaZnO TFTs fabricated on a transparent polyimide film. We demonstrated a prototype flexible-display system integrated with a bend-input function that enables users to interact with the display by flexing it.
Keywords :
LED displays; amorphous semiconductors; flexible displays; gallium compounds; indium compounds; organic light emitting diodes; polymer films; thin film transistors; zinc compounds; InGaZnO; WUXGA flexible bottom-emission active-matrix organic light-emitting diode; amorphous InGaZnO TFT; bend-input function; bias-temperature stress; flexible AMOLED display; plastic substrates; size 10.2 inch; threshold voltage shifts; transparent polyimide film; Active matrix organic light emitting diodes; Films; Plastics; Polyimides; Substrates; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
Conference_Location :
Kyoto
