Activation of silicon implanted with phosphorus atoms by microwave heating

Author

Yoshidomi, Shinya ; Akiyama, Chihiro ; Furukawa, Jun-ichiro ; Hsumi, Masahiko ; Ishii, Takuro ; Sameshima, Takeru ; Inouchi, Yutaka ; Naito, Masakazu

Author_Institution

Fac. of Eng., Tokyo Univ. of Agric. & Technol., Koganei, Japan

fYear

2013

fDate

2-5 July 2013

Firstpage

181

Lastpage

184

Abstract

We report a simple method with a commercial microwave oven for activation of 22 Ωcm p-type silicon implanted with phosphorus atoms a dose of 1.0×10¹⁵ cm^-2 at 1000 W for 9 min. Microwave transmittance measurement revealed a sheet resistance of 209 Ω/sq and an activation ratio of 60 %. The microwave heating achieved recrystallization of the amorphized surface region caused by ion implantation. Typical pn diode and solar cell characteristics with the conversion efficiency of 9.3 % were obtained.

Keywords

amorphisation; electrical resistivity; elemental semiconductors; ion implantation; microwave materials processing; microwave spectra; phosphorus; recrystallisation; semiconductor diodes; semiconductor doping; silicon; solar cells; Si:P; activation ratio; amorphized surface; commercial microwave oven; conversion efficiency; ion implantation; microwave heating; microwave transmittance measurement; phosphorus atom implanted p-type silicon; pn diode; power 1000 W; recrystallization; sheet resistance; solar cell characteristics; time 9 min; Electromagnetic heating; Microwave measurement; Microwave ovens; Microwave theory and techniques; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on

Conference_Location

Kyoto

Type

conf

Filename

6617810