Title :
Oblique lateral grain growth of Si film in CW diode laser annealing
Author :
Wenchang Yeh ; Morioka, Ryota
Author_Institution :
Interdiscipl. Grad. Sch. of Sci. & Eng., Shimane Univ., Matsue, Japan
Abstract :
376 nm ultra-violet laser diode was used for crystallization of Si thin-film on glass substrate. Laser beam was focused on Si film with a dimension of 1.5 × 8μm and it is scanned over 40nm-thick Si film with velocities of 1 m/s. The short axis of laser spot was tilted against the scanning direction to realize oblique grain growth, and then each cw laser scanning was superposed in a direction perpendicular to laser scanning direction to realize continuous grain growth in the oblique direction.
Keywords :
crystallisation; elemental semiconductors; grain growth; laser beam annealing; plasma CVD; semiconductor growth; semiconductor lasers; semiconductor thin films; silicon; CW diode laser annealing; Si; SiO2; crystallization; glass substrate; laser scanning direction; laser spot; oblique lateral grain growth; size 40 nm; thin film; ultraviolet laser diode; Annealing; Diode lasers; Films; Laser beams; Semiconductor lasers; Silicon;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
Conference_Location :
Kyoto
