Flip-Chip Interconnects for 250 GHz Modules

Author

Monayakul, Sirinpa ; Sinha, S. ; Wang, C.-T. ; Weimann, N. ; Schmuckle, F.J. ; Hrobak, M. ; Krozer, V. ; John, W. ; Weixelbaum, L. ; Wolter, P. ; Kruger, O. ; Heinrich, W.

Author_Institution

Leibniz-Inst. fur Hochstfrequenztechnik, Ferdinand-Braun-Inst., Berlin, Germany

Volume

25

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

358

Lastpage

360

Abstract

With the increasing availability of MMICs at frequencies beyond 100 GHz low-loss interconnects for module fabrication in this frequency range become essential. This letter presents results on a flip-chip mounting approach exhibiting a bandwidth of more than 250 GHz, supporting both coplanar and stripline transitions. The interconnects are realized with 10 μm-diameter AuSn microbumps. S-parameter measurements show an insertion loss of less than 1.0 dB per interconnect and a return loss better than 10 dB up to 250 GHz. The experimental results are in good agreement with 3-D EM simulations.

Keywords

MMIC; S-parameters; flip-chip devices; gold alloys; integrated circuit interconnections; modules; strip line transitions; tin alloys; AuSn; MMIC; S-parameter measurement; coplanar transition; flip-chip interconnect; flip-chip mounting approach; frequency 250 GHz; frequency range; insertion loss; low-loss interconnect; microbump; module fabrication; monolithic microwave integrated circuit; return loss; stripline transition; Bonding; Coplanar waveguides; Diamonds; Gold; Integrated circuit interconnections; Stripline; Substrates; Broadband transitions; coplanar waveguide; flip-chip; interconnect; mm-wave; stripline;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2015.2424294

Filename

7106567