Title :
Bandgap-Engineered in Indium–Gallium–Oxide Ultraviolet Phototransistors
Author :
Ting-Hao Chang ; Shoou-Jinn Chang ; Chiu, C.J. ; Chih-Yu Wei ; Yen-Ming Juan ; Wen-Yin Weng
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The electrical performance of amorphous indium gallium oxide (a-IGO) thin-film transistors applied as deep-ultraviolet (DUV) phototransistors is investigated. It was found that the bandgap of a-IGO can be engineered by altering its chemical composition. The performance of the phototransistors depended strongly on In2O3 content in the IGO film. When the indium content increases from 21% to 31%, the phototransistor cutoff red-shifted from 280 to 320 nm. The DUV-to-visible rejection ratio and photoresponsivity of the fabricated phototransistors were ~105 and 0.18 A/W.
Keywords :
III-V semiconductors; electro-optical devices; indium compounds; optical films; optical materials; phototransistors; thin film transistors; DUV-to-visible rejection ratio; IGO; IGO film; In2O3; a-IGO bandgap; amorphous indium gallium oxide thin-film transistors; chemical composition; deep-ultraviolet phototransistors; electrical performance; indium content; indium-gallium-oxide ultraviolet phototransistors; photoresponsivity; phototransistor cutoff; wavelength 280 nm to 320 nm; Films; Indium; Photoconductivity; Photonic band gap; Phototransistors; Radio frequency; Thin film transistors; Ga2O3; IGO; phototransistors;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2015.2400446
