DocumentCode
642069
Title
Designing MW transistor model
Author
Chashkov, M.S.
Author_Institution
Siberian State Univ. for Telecommun. & Inf., Novosibirsk, Russia
fYear
2012
fDate
2-4 Oct. 2012
Firstpage
96
Lastpage
100
Abstract
Results of designing MW transistor model are presented. Designing is based on measurement of S parameters for cutoff mode and operating point.
Keywords
S-parameters; microwave transistors; semiconductor device models; MW transistor model; S parameter measurement; cutoff mode; operating point; Integrated circuit modeling; Microwave FETs; Microwave amplifiers; Microwave circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4673-2842-5
Type
conf
DOI
10.1109/APEIE.2012.6628965
Filename
6628965
Link To Document