• DocumentCode
    643432
  • Title

    Triple well subthreshold CMOS logic using body-bias technique

  • Author

    Niranjan, Vandana ; Kumar, Ajit ; Jain, Shail Bala

  • Author_Institution
    Dept. of Electron. & Commun. Eng., GGSIP Univ., New Delhi, India
  • fYear
    2013
  • fDate
    26-28 Sept. 2013
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Subthreshold logic provides extremely low power consumption since the power supplies are kept below the threshold voltage and using the small subthreshold current of MOS transistors to operate. Subthreshold circuits are ideal for ultra low power applications however they suffer from low operating speeds. By improving the speed of subthreshold circuits their application spectrum can be expanded. In this paper a body-bias technique in triple well CMOS technology is explored to match the subthreshold currents of both the NMOS and PMOS transistors for improving the speed of subthreshold circuits. We derive an approximate expression for the generated body bias voltage. Circuit simulations were conducted using 180nm CMOS technology to validate proposed concept. The results were compared with standard body bias technique in terms of delay and power consumption. The proposed body biasing technique improves power-delay product by approx. 38%.
  • Keywords
    CMOS logic circuits; low-power electronics; CMOS technology; MOS transistors; body-bias technique; low power consumption; subthreshold circuits; triple well subthreshold CMOS logic; CMOS integrated circuits; CMOS technology; Capacitance; Inverters; MOSFET; Threshold voltage; Body bias; Subthreshold logic; Triple well CMOS process; low power;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Signal Processing, Computing and Control (ISPCC), 2013 IEEE International Conference on
  • Conference_Location
    Solan
  • Print_ISBN
    978-1-4673-6188-0
  • Type

    conf

  • DOI
    10.1109/ISPCC.2013.6663447
  • Filename
    6663447