Compact models for double gate hetero gate dielectric nano scale Tunnel FET

This paper presents the Green Function formalism for hetero double gate nano scale Tunnel FET drain current. In nano-transistors where the channel length is comparable to the electron mean free path, nonstationary or even ballistic transport is probably of great importance regarding the device performance. A generalized Green´s function is derived for vector electric potentials. The drain current is derived using numerical simulation and compared with drain current obtained from Schrodinger´s wave equation method that accounts for the quantum confinement effect. Finally, it is observed that for ultra short channel Tunnel FETs, the two model results shows close match at ballistic channel length.