DocumentCode
644433
Title
Metamorphic ultrafast photoconductive materials in the 1-µm wavelength region for efficient terahertz emission
Author
Sekine, Norihiko ; Morohashi, Isao ; Akahane, Kouichi ; Hosako, Iwao
Author_Institution
Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
2
Abstract
We have developed ultrafast photoconductive InGaAs/InAlAs structures for operation in the 1-μm wavelength region. The structures were grown metamorphically on GaAs substrates and show both an ultrafast photo-carrier lifetime and a high resistance.
Keywords
III-V semiconductors; aluminium compounds; carrier lifetime; electric resistance; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoconducting materials; semiconductor growth; terahertz waves; GaAs; GaAs substrates; InGaAs-InAlAs; efficient terahertz emission; metamorphic ultrafast photoconductive materials; ultrafast photocarrier lifetime; ultrafast photoconductive InGaAs-InAlAs structures; wavelength 1 mum; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Photonic band gap; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665400
Filename
6665400
Link To Document