DocumentCode
644469
Title
InGaAs-based large area photoconductive emitters for 1.55 µm excitation
Author
Xu, Mengdi ; Mittendorff, M. ; Dietz, R.J.B. ; Gobel, T. ; Schneider, H. ; Helm, M. ; Winnerl, S.
Author_Institution
Xi´an Univ. of Technol., Xi´an, China
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
2
Abstract
We present a scalable large-area terahertz (THz) emitter designed for excitation with 1.55 μm pump radiation. It is based on an InGaAs heterostructure combined with a microstructured electrode pattern. Electric fields of more than 2.5 V/cm in the THz focus are reached, the spectrum of the pulses extends up to 3 THz.
Keywords
III-V semiconductors; electrodes; gallium arsenide; indium compounds; photoconductivity; semiconductor heterojunctions; terahertz wave spectra; InGaAs; THz focus; electric fields; excitation; heterostructure; large area photoconductive emitters; large-area terahertz emitter; microstructured electrode pattern; pulse spectrum; pump radiation; wavelength 1.55 mum; Electric fields; Fiber lasers; Indium gallium arsenide; Laser beams; Laser excitation; Optical fibers; Power lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665436
Filename
6665436
Link To Document