Terahertz photoconductive antennas at 800 nm, 1000 nm, and 1550 nm: A performance comparison

Author

Saeedkia, Daryoosh ; Kostakis, Ioannis ; Missous, Mohamed

Author_Institution

TeTechS Inc., Waterloo, ON, Canada

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

1

Abstract

Terahertz photoconductive antennas are fabricated on low-temperature-grown GaAs, low-temperature-grown In_0.3Ga_0.7As, and beryllium (Be) doped low-temperature-grown lattice-matched In_0.53Ga_0.47As-In_0.52Al_0.48As multi-quantum wells material systems for 800 nm, 1000 nm, and 1550 nm operation wavelengths. Several narrow band and broad band antenna designs are fabricated and tested under pulse and cw excitation, and their performances in terms of signal to noise ratio, dynamic rand, and bandwidth are compared.

Keywords

broadband antennas; gallium arsenide; indium compounds; millimetre wave antennas; quantum wells; terahertz waves; In_0.3Ga_0.7As; In_0.53Ga_0.47As-In_0.52Al_0.48As; beryllium; broad band antenna designs; cw excitation; dynamic rand; multiquantum wells material systems; narrow band antenna designs; operation wavelengths; pulse excitation; signal to noise ratio; terahertz photoconductive antennas; wavelength 1000 nm; wavelength 1550 nm; wavelength 800 nm; Apertures; Bandwidth; Dipole antennas; Dynamic range; Epitaxial growth; Indium gallium arsenide;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665439

Filename

6665439