Excitation spectroscopy of terahertz emitters and detectors made from AIIIBV semiconductors

Author

Arlauskas, A. ; Adamonis, J. ; Adomavicius, R. ; Krotkus, A.

Author_Institution

Center for Phys. Sci. & Technol., Vilnius, Lithuania

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

2

Abstract

Terahertz emitters and detectors made from A_IIIB_V semiconductors were investigated by means of a tunable wavelength laser system. THz excitation spectra of InAs and InSb has been investigated. It was shown that subsidiary valley position can be determined quite accurately. As terahertz detectors, the photoconductors manufactured from GaAs and InGaAs epitaxial layers grown by MBE at low substrate temperatures were investigated. It was revealed that the investigated materials can be used for manufacturing THz optoelectronic components sensitive to 1 μm and 1.5 μm wavelength laser radiation, respectively.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser tuning; molecular beam epitaxial growth; photoconducting materials; semiconductor epitaxial layers; terahertz wave detectors; terahertz wave generation; terahertz wave spectra; A_IIIB_V semiconductors; InAs; InGaAs; InSb; MBE; THz excitation spectra; THz optoelectronic components; epitaxial layers; excitation spectroscopy; laser radiation; low substrate temperatures; photoconductors; subsidiary valley position; terahertz detectors; terahertz emitters; tunable wavelength laser system; wavelength 1 mum to 1.5 mum; Detectors; Laser excitation; Materials; Photonics; Semiconductor device measurement; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665460

Filename

6665460