1.9 THz indirect injection Al0.175Ga0.825As/GaAs quantum cascade laser operating at extreme higher temperature

Author

Lin, T.-T. ; Sasaki, Motoharu ; Hirayama, Hiroshi

Author_Institution

Terahertz Quantum Device Lab., RIKEN, Sendai, Japan

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

2

Abstract

Terahertz quantum cascade lasers (THz QCLs) are a promising semiconductor THz source to realize the expected widely compact size THz applications. Currently limitation of THz QCLs is the limited maximum operation temperature (T_max) and the extension of the operation frequency. Here we propose one Al_0.175Ga_0.825As/GaAs indirect injection design QCLs operated near 1.9 THz with 160 K. Indirect scattering assisted selective injection design with higher Al composition barrier expected to approach low frequency with high temperature operation.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; microwave photonics; quantum cascade lasers; Al_0.175Ga_0.825As-GaAs; frequency 1.9 THz; indirect injection design; limited maximum operation temperature; semiconductor THz source; temperature 160 K; terahertz quantum cascade laser; Gallium arsenide; Phonons; Quantum cascade lasers; Resonant frequency; Resonant tunneling devices; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665538

Filename

6665538