The effect of Er fraction on THz power generated by extrinsic-photoconductive ErAs:GaAs switches driven at 1550 nm

Author

Middendorf, J.R. ; Brown, E.R.

Author_Institution

Depts. of Phys. & Electr. Eng., Wright State Univ., Dayton, OH, USA

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

2

Abstract

Two Er-doped-GaAs photoconductive (PC) switches have been studied in extrinsic mode with different Er fractions of 1% and 2%. The PC switches were driven with a 1550 nm ultrafast laser (hν = 0.56 U_G, U_G = 1.42 eV for GaAs) and exhibited different THz bandwidths and photoelectric responsivities. These experiments are aimed at optimizing the new extrinsic mode of generating THz radiation in ErAs:GaAs photoconductive devices. This is the first ever demonstration of generating THz power with extrinsic photoconductivity with a 2% Er ErAs:GaAs PC switch. We find that the PC switch with 2% Er concentration produced more THz power and the bandwidth was marginally better.

Keywords

III-V semiconductors; erbium compounds; gallium arsenide; photoconducting switches; photoconductivity; terahertz wave generation; ErAs:GaAs; PC switches; THz power; THz radiation generation; extrinsic-photoconductive switches; fraction effect; photoconductivity; photoelectric responsivity; wavelength 1550 nm; Antennas; Bandwidth; Broadband amplifiers; Detectors; Erbium; Photoconductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665589

Filename

6665589