DocumentCode
644622
Title
0.2 THz wireless communication using plasma-wave transistor detector
Author
Tohme, L. ; Ducournau, Guillaume ; Blin, S. ; Coquillat, Dominique ; Nouvel, P. ; Penarier, A. ; Knap, Wojciech ; Lampin, J.F.
Author_Institution
GIS Teralab, Univ. Montpellier 2, Montpellier, France
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
1
Abstract
Transistors are possible THz detectors using rectification in the channel that can be applied for detection of high data-rate wireless communications, based on THz-frequency carrier. For the first time, we present the transmission of pseudo-random bit sequence at 0.2 THz using a commercial GaAs transistor and demonstrate open eye patterns up to 0.250 Gbps.
Keywords
gallium arsenide; submillimetre wave detectors; submillimetre wave transistors; GaAs; THz detectors; THz-frequency carrier; frequency 0.2 THz; high data-rate wireless communications; open eye patterns; plasma-wave transistor detector; pseudo-random bit sequence; Detectors; Gallium arsenide; Generators; Sensitivity; Temperature measurement; Transistors; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665591
Filename
6665591
Link To Document