DocumentCode
644636
Title
Generation and detection of THz radiation up to 4.5 THz using LTG-GaAs PCAs illuminated at 1560 nm
Author
Ramer, Jan-Martin ; Ospald, Frank ; von Freymann, Georg ; Beigang, Rene
Author_Institution
Fraunhofer Inst. for Phys. Meas. Tech. IPM, Kaiserslautern, Germany
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
2
Abstract
We demonstrate generation and detection of terahertz radiation using low-temperature grown GaAs photoconductive switches excited at 1560 nm. The dependence of the DC photocurrent and the terahertz amplitude on the input power of the detector and emitter is evaluated.
Keywords
III-V semiconductors; gallium arsenide; photoconducting switches; photoconductivity; photodetectors; photoemission; semiconductor growth; terahertz wave detectors; terahertz wave generation; DC photocurrent; GaAs; PCA; THz radiation detection; THz radiation generation; low-temperature grown photoconductive switch; size 1560 nm; terahertz amplitude; Absorption; Detectors; Gallium arsenide; Laser excitation; Photoconductivity; Power lasers; Principal component analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665605
Filename
6665605
Link To Document