• DocumentCode
    644806
  • Title

    Terahertz emission from quantum-sized silicon p+ - n junctions

  • Author

    Bagraev, Nikolay T. ; Danilovskii, Eduard Yu ; Gets, Dmitrii S. ; Kaveev, A.K. ; Klyachkin, Leonid E. ; Kropotov, G.I. ; Kudryavtsev, Anatoly A. ; Kuzmin, Roman V. ; Malyarenko, Anna M. ; Tzibizov, I.A. ; Tsypishka, D.I. ; Vinerov, I.A.

  • Author_Institution
    Ioffe Phys. Tech. Inst., St. Petersburg, Russia
  • fYear
    2013
  • fDate
    1-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    We present the first findings of the THz emission from the ultra-narrow p-type Si quantum well confined by the superconductor (SC) δ-barriers on the n-type Si(100) surface. The EL spectra revealed by the voltage applied along the Si-QW plane appear to result from the value of the SC energy gap.
  • Keywords
    electroluminescence; elemental semiconductors; semiconductor quantum wells; silicon; superconducting energy gap; terahertz wave spectra; EL spectra; Si; Si-quantum well plane; n-type Si(100) surface; quantum-sized silicon junctions; superconductor δ-barriers; superconductor energy gap; terahertz emission; ultranarrow p-type Si quantum well; Boron; Josephson junctions; Junctions; Lithography; Phase modulation; Silicon; Superconducting photodetectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
  • Conference_Location
    Mainz
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2013.6665776
  • Filename
    6665776
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=644806