DocumentCode
644822
Title
Probing of local electron states in Pb1−x Snx Te(In) narrow-gap semiconductors using laser terahertz radiation
Author
Chernichkin, Vladimir ; Ryabova, Ludmila ; Nicorici, Andrey ; Danilov, Sergey ; Khokhlov, D.
Author_Institution
M.V. Lomonosov Moscow State Univ., Moscow, Russia
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
1
Abstract
A new type of semiconductor local states is revealed in Pb1-xSnxTe(In) narrow-gap semiconductors. The energy position of these states is not linked to any specific location in the semiconductor energy spectrum, but follows the quasiFermi level position, which may be tuned by photoexcitation.
Keywords
Fermi level; lead compounds; localised states; narrow band gap semiconductors; tellurium compounds; terahertz wave spectra; tin compounds; Pb1-xSnxTe(In); laser terahertz radiation; local electron states probing; narrow-gap semiconductors; photoexcitation; quasiFermi level; semiconductor energy spectrum; semiconductor local states; Magnetomechanical effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665792
Filename
6665792
Link To Document