Title :
Perspectives of graphene SymFETs for THz applications
Author :
Sensale-Rodriguez, Berardi ; Pei Zhao ; Jena, D. ; Xing, Huili Grace
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Utah, Salt Lake City, UT, USA
Abstract :
We explore the potential of graphene symmetric tunneling field effect transistors (SymFETs) for THz applications. The interplay between the negative differential conductance in these devices and electron plasma waves occurring in the graphene layers might lead to very sensitive THz detection (R > 100 kV/W) or amplifiers with power gains ~ 7 dB at RT.
Keywords :
electric admittance; graphene; millimetre wave field effect transistors; plasma waves; tunnel transistors; SymFET; THz applications; THz detection; amplifiers; electron plasma waves; graphene layers; negative differential conductance; symmetric tunneling field effect transistors; Coherence; Detectors; Graphene; Transistors;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665853
