Terahertz monochromatic coherent emission from an asymmetric chirped dual-grating-gate InP-HEMT with a photonic vertical cavity

Author

Watanabe, Toshio ; Kurita, Yuichi ; Satou, Akira ; Suemitsu, Tetsuya ; Knap, Wojciech ; Popov, V.V. ; Otsuji, Taiichi

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

2

Abstract

We propose InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric chirped dual-grating-gate structure which greatly enhances plasmon instabilities. The fabricated device demonstrates an intense stimulated emission of terahertz monochromatic radiation at cryogenic temperatures for the first time.

Keywords

III-V semiconductors; aluminium compounds; cryogenic electronics; gallium arsenide; high electron mobility transistors; indium compounds; plasmons; submillimetre wave transistors; terahertz wave devices; InAlAs-InGaAs-InP; asymmetric chirped dual-grating-gate HEMT; chirped dual-grating-gate structure; cryogenic temperatures; high electron mobility transistors; plasmon instability; terahertz monochromatic coherent emission; terahertz monochromatic radiation; Chirp; Gold; HEMTs; Indium compounds; MODFETs; Plasmons; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665894

Filename

6665894