Transient THz photoconductivity in dynamically screened InGaN/GaN quantum wells

Author

Jin, Z. ; Lahmann, S. ; Rossow, U. ; Hangleiter, A. ; Bonn, Mischa ; Turchinovich, Dmitry

Author_Institution

Max Planck Inst. for Polymer Res., Mainz, Germany

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

2

Abstract

Using optical pump - THz probe spectroscopy we reveal complex ultrafast photoconductivity dynamics in InGaN/GaN quantum wells under dynamical screening conditions, where, at sufficiently high excitation densities, the photo-generated carriers fully screen the initial internal field of 3 MV/cm. The THz photoconductivity spectra contain features of both localized and free charges.

Keywords

III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; photoconductivity; semiconductor quantum wells; terahertz wave spectra; wide band gap semiconductors; InGaN-GaN; THz photoconductivity spectra; dynamical screening conditions; dynamically screened quantum wells; excitation density; free charges; localized charges; optical pump THz probe spectroscopy; photogenerated carriers; transient THz photoconductivity; ultrafast photoconductivity dynamics; Gallium nitride; Optical polarization; Optical pulses; Optical pumping; Photoconductivity; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665920

Filename

6665920