• DocumentCode
    644950
  • Title

    Density-dependent electron scattering in photoexcited GaAs

  • Author

    Mics, Zoltan ; D´Angio, Andrea ; Jensen, Soren A. ; Bonn, Mischa ; Turchinovich, Dmitry

  • Author_Institution
    Max Planck Inst. for Polymer Res., Mainz, Germany
  • fYear
    2013
  • fDate
    1-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In a series of systematic optical pump - terahertz probe experiments we study the density-dependent electron scattering rate in photoexcited GaAs in a large range of carrier densities. The electron scattering time decreases by as much as a factor of 4, from 320 to 60 fs, as the electron density changes by 4 orders of magnitude, from 1015 to 1019 cm-3.
  • Keywords
    III-V semiconductors; electron density; gallium arsenide; photoexcitation; terahertz wave spectra; GaAs; carrier density; density dependent electron scattering; electron density; electron scattering time; photoexcited gallium arsenide; systematic optical pump-terahertz probe; time 320 fs; time 60 fs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
  • Conference_Location
    Mainz
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2013.6665922
  • Filename
    6665922
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=644950