Innovative instrumentation for HTRB tests on semiconductor power devices

Author

Consentino, G. ; De Pasquale, D. ; Galiano, S. ; D´Ignoti, A. ; Pace, Calogero ; Hernandez Ambato, J.L. ; Mazzeo, M. ; Giordano, C.

Author_Institution

STMicroelectron. PTD Group, Catania, Italy

fYear

2013

fDate

3-5 Oct. 2013

Firstpage

1

Lastpage

5

Abstract

An automated system designed to perform reliability tests on power transistors is reported. An innovative non-standard procedure for High Temperature Reverse Bias complemented with Electrical Characterization Test based on the division of the total stress time in several short periods is proposed. Thanks to a purposely designed mini-heater the system controls the individual chip temperature on the device under test when testing many devices at the same time. Electrical parameters can be periodically measured to identify early warnings of failure and stopping the same test avoiding an uncontrolled thermal runaway process. When such event occurs the test was stopped only for the involved devices.

Keywords

automatic testing; power transistors; semiconductor device reliability; semiconductor device testing; stress effects; HTRB tests; automated system; chip temperature; electrical characterization test; high temperature reverse bias tests; innovative instrumentation; mini-heater; power transistors; reliability tests; semiconductor power devices; total stress time; Electric variables measurement; Heating; MOSFET; Performance evaluation; Reliability; Stress; Temperature measurement; Cycles stress; HTRB; Mini-heater; Power devices; Reliability; Thermal control;

fLanguage

English

Publisher

ieee

Conference_Titel

AEIT Annual Conference, 2013

Conference_Location

Mondello

Print_ISBN

978-8-8872-3734-4

Type

conf

DOI

10.1109/AEIT.2013.6666814

Filename

6666814