Numerical simulation of CIGS thin film solar cells using SCAPS-1D

Author

Khoshsirat, Nima ; Md Yunus, Nurul Amziah

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. Putra Malaysia Serdang, Serdang, Malaysia

fYear

2013

fDate

May 30 2013-June 1 2013

Firstpage

63

Lastpage

67

Abstract

The performance of copper indium gallium diselenide (CIGS) thin film solar cell has been numerically simulated with different buffer and absorber layers thickness. The cell structure based on CIGS compound semiconductor as the absorber layer, indium sulfide as a buffer layer, un-doped (i) and n-doped zinc oxide as a window layer has been simulated using the simulation program called SCAPS-1D. This study aimed to find the optimum thickness of buffer and absorber layer for a CIGS thin film solar cells with indium sulfide buffer layer. It is found that the optimum thickness of the buffer layer is from 40nm to 50nm and for the absorber layer is in the range of 2000nm to 3000nm.

Keywords

numerical analysis; semiconductor thin films; solar cells; ternary semiconductors; CIGS compound semiconductor; CIGS thin film solar cells; CuInGa; SCAPS-1D; absorber layers thickness; buffer layers thickness; copper indium gallium diselenide performance; indium sulfide; indium sulfide buffer layer; numerical simulation; simulation oxide; simulation program; window layer; Buffer layers; Conferences; Current density; Photonic band gap; Photovoltaic cells; Radiative recombination; CIGS; Inder Terms; InxSy; SCAPS-1D Thin film solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Sustainable Utilization and Development in Engineering and Technology (CSUDET), 2013 IEEE Conference on

Conference_Location

Selangor

Print_ISBN

978-1-4673-4689-4

Type

conf

DOI

10.1109/CSUDET.2013.6670987

Filename

6670987