IGBT on SOI. Technology and construction investigation

Results of the computer simulation of the manufacturing process formation of the bipolar transistor with insulated gate (IGBT) on the base of technology “Silicon on insulator” (SOI) are presented. Current-voltage characteristics of the investigated IGBT device were calculated. Obtained results were used as a base for optimization of the technology parameters on the example of the most significant parameter - the gate oxide thickness. It is shown that the gate oxide thickness has a significant impact on the electrical characteristics of the IGBT. When the oxide thickness is changed from 40 nm to 30 nm, the base current of a bipolar transistor (the part of the IGBT structure) is increased and thus the value of collector saturation current is increased (from ≈55 μA to ≈175μA). At the same time, the switch-up time of both structures IGBT is equal to 25 ns, but turn-off time is increased from 55 ns (h_ox=40 nm) to the value of 75 ns (h_ox=30 nm). The calculated values of the switch-on and switch-off times less than one order, and the value of the collector current is more than two orders of magnitude for the vertical structure of the IGBT based on bulk silicon in comparison with IGBT on SOI structure.