DocumentCode
648568
Title
Design of nonvolatile memory based on magnetic tunnel junction for special electronic systems
Author
Kostrov, Aleksandr ; Nelayev, V. ; Stempitsky, Viktor ; Belous, A. ; Turtsevich, A.
Author_Institution
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear
2013
fDate
27-30 Sept. 2013
Firstpage
1
Lastpage
4
Abstract
Description of non-volatile memory based on magnetic tunnel junction is presented. A dynamic Verilog-A behavioral model and a Spice macro-model of the single memory cell is described. The advantages of the proposed models is demonstrated on a next generation revolutionary Magnetic Random Access Memory (MRAM) which we offer to implement on an radiation inherently integrated circuit (IC) based on CMOS technology.
Keywords
CMOS memory circuits; MRAM devices; SPICE; hardware description languages; integrated circuit design; integrated circuit modelling; magnetic tunnelling; radiation hardening (electronics); CMOS technology; Spice macro-model; dynamic verilog-A behavioral model; magnetic tunnel junction; next generation revolutionary MRAM; next generation revolutionary magnetic random access memory; nonvolatile memory design; radiation inherently-integrated circuit; single-memory cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Design & Test Symposium, 2013 East-West
Conference_Location
Rostov-on-Don
Print_ISBN
978-1-4799-2095-2
Type
conf
DOI
10.1109/EWDTS.2013.6673153
Filename
6673153
Link To Document