• DocumentCode
    649172
  • Title

    A temperature and process insensitive CMOS reference current generator

  • Author

    Bethi, Shiva Sai ; Kye-Shin Lee ; Veillette, R. ; Carletta, Joan ; Willett, Melanie

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Akron, Akron, OH, USA
  • fYear
    2013
  • fDate
    4-7 Aug. 2013
  • Firstpage
    301
  • Lastpage
    304
  • Abstract
    This work presents a temperature and process insensitive CMOS transistor only reference current generator. In the proposed scheme, the passive resistor used in the CMOS Widlar current source is replaced with a transistor resistor where the gate voltage is controlled so that the output current is insensitive to temperature variation. Furthermore, to maintain the temperature insensitivity under process variations, the transistor resistor gate bias circuits optimized for nominal, strong and weak process corners are built on-chip. The proposed reference current generator is designed using 0.5 μm CMOS SOI technology, where the operation is verified through circuit level simulations under nine different process corners. The 20 μA reference current shows a temperature coefficient of 39 ppm/°C within the temperature range of 25°C ~ 125°C for the nominal process corner.
  • Keywords
    CMOS integrated circuits; constant current sources; reference circuits; silicon-on-insulator; CMOS SOI technology; CMOS reference current generator; current 20 muA; current source; gate voltage; passive resistor replacement; process insensitive reference current generator; size 0.5 mum; temperature 25 C to 125 C; temperature insensitive reference current generator; transistor resistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
  • Conference_Location
    Columbus, OH
  • ISSN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2013.6674645
  • Filename
    6674645