DocumentCode :
649172
Title :
A temperature and process insensitive CMOS reference current generator
Author :
Bethi, Shiva Sai ; Kye-Shin Lee ; Veillette, R. ; Carletta, Joan ; Willett, Melanie
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Akron, Akron, OH, USA
fYear :
2013
fDate :
4-7 Aug. 2013
Firstpage :
301
Lastpage :
304
Abstract :
This work presents a temperature and process insensitive CMOS transistor only reference current generator. In the proposed scheme, the passive resistor used in the CMOS Widlar current source is replaced with a transistor resistor where the gate voltage is controlled so that the output current is insensitive to temperature variation. Furthermore, to maintain the temperature insensitivity under process variations, the transistor resistor gate bias circuits optimized for nominal, strong and weak process corners are built on-chip. The proposed reference current generator is designed using 0.5 μm CMOS SOI technology, where the operation is verified through circuit level simulations under nine different process corners. The 20 μA reference current shows a temperature coefficient of 39 ppm/°C within the temperature range of 25°C ~ 125°C for the nominal process corner.
Keywords :
CMOS integrated circuits; constant current sources; reference circuits; silicon-on-insulator; CMOS SOI technology; CMOS reference current generator; current 20 muA; current source; gate voltage; passive resistor replacement; process insensitive reference current generator; size 0.5 mum; temperature 25 C to 125 C; temperature insensitive reference current generator; transistor resistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
Conference_Location :
Columbus, OH
ISSN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2013.6674645
Filename :
6674645
Link To Document :
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