DocumentCode
649172
Title
A temperature and process insensitive CMOS reference current generator
Author
Bethi, Shiva Sai ; Kye-Shin Lee ; Veillette, R. ; Carletta, Joan ; Willett, Melanie
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Akron, Akron, OH, USA
fYear
2013
fDate
4-7 Aug. 2013
Firstpage
301
Lastpage
304
Abstract
This work presents a temperature and process insensitive CMOS transistor only reference current generator. In the proposed scheme, the passive resistor used in the CMOS Widlar current source is replaced with a transistor resistor where the gate voltage is controlled so that the output current is insensitive to temperature variation. Furthermore, to maintain the temperature insensitivity under process variations, the transistor resistor gate bias circuits optimized for nominal, strong and weak process corners are built on-chip. The proposed reference current generator is designed using 0.5 μm CMOS SOI technology, where the operation is verified through circuit level simulations under nine different process corners. The 20 μA reference current shows a temperature coefficient of 39 ppm/°C within the temperature range of 25°C ~ 125°C for the nominal process corner.
Keywords
CMOS integrated circuits; constant current sources; reference circuits; silicon-on-insulator; CMOS SOI technology; CMOS reference current generator; current 20 muA; current source; gate voltage; passive resistor replacement; process insensitive reference current generator; size 0.5 mum; temperature 25 C to 125 C; temperature insensitive reference current generator; transistor resistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
Conference_Location
Columbus, OH
ISSN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2013.6674645
Filename
6674645
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