A high efficiency 90-nm CMOSRF to DC rectifier

This paper presents a novel high efficiency RF to DC converter for RFID applications. The proposed rectifier circuit is designed in 90 nm CMOS technology using single RF source. It exploits an internal V_th cancellation technique along with a leakage current reducer. The circuit performs well in the low input power threshold. The Simulation results at frequency of 920MHz show that the Power Conversion Efficiency (PCE) has improved compared to the conventional rectifier using diode connected transistor and V_th cancellation techniques. The measured PCE is 36.3% at -14.3dBm and is improved to 54.5% with an impedance matching network between the source and rectifiers´ input.