DocumentCode
649302
Title
A single event transient hardening circuit design technique based on strengthening
Author
Calomarde, Antonio ; Amat, Esteve ; Moll, Francesc ; Rubio, Albert
Author_Institution
Electron. Eng. Dept., Univ. Politec. de Catalunya, Barcelona, Spain
fYear
2013
fDate
4-7 Aug. 2013
Firstpage
821
Lastpage
824
Abstract
In a near future of high-density and low-power technologies, the study of soft errors will not only be relevant for memory systems and latches of logic circuits, but also for the combinational parts of logic circuits which seriously affect the system´s operation. In this paper, we present a novel design strategy to reduce the impact of radiation-induced single event transients (SET) on logic circuits. This design style achieves SET mitigation by Strengthening the sensitive node using a likeness to feedback techniques. We have analyzed several techniques from hardening radiation at transistor level to a single event transient in 7nm FinFET devices. Simulation results have shown the proposed method has higher soft error robustness than the existing ones.
Keywords
MOSFET; circuit feedback; logic circuits; logic design; low-power electronics; radiation hardening (electronics); FinFET devices; SET mitigation; design strategy; design style; feedback techniques; hardening radiation; high-density technologies; logic circuits; low-power technologies; radiation-induced single event transients; sensitive node strengthening; single event transient hardening circuit design; size 7 nm; soft error robustness; soft errors; transistor level; high-speed integrated circuits; radiation hardening; single event transient; soft error;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
Conference_Location
Columbus, OH
ISSN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2013.6674775
Filename
6674775
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