Self-heating of nano-scale SOI MOSFETs: TCAD and molecular dynamics simulations

Self-heating of fully-depleted SOI MOSFETs scaled according to ITRS specifications for the year 2015 is investigated using numerical TCAD simulations and the method of molecular dynamics. The local warming-up due to self-heating of SOI-based transistors can exceed 200 K and must be considered in the simulation. Thermal properties of the few-nanometer-thin silicon layers differ significantly from those of bulk silicon. Therefore, molecular dynamics simulations were applied to quantify thermal transport in the channel of the ultra-thin-silicon body SOI transistors.