DocumentCode
650055
Title
Optical and structural characterization of antimony doped zinc oxide single crystal
Author
Juarez-Diaz, G. ; Pena-Sierra, R. ; Diaz-Reyes, J. ; Martinez-Juarez, J. ; Contreras-Rascon, J.
Author_Institution
Fac. de Cienc. de la Comput., Benemerita Univ. Autonoma de Puebla, Puebla, Mexico
fYear
2013
fDate
Sept. 30 2013-Oct. 4 2013
Firstpage
411
Lastpage
414
Abstract
The optical and structural study of the antimony doping in zinc oxide (ZnO) single crystal (001) performed by atomic diffusion is presented. Diffusion was carried out with a temperature of 1000 ° C for periods of 1 and 2 hrs from a solid source prepared by partial oxidation of antimony, characterization of each step process was performed by photoluminescence (PL), x-ray diffraction (XRD) and high resolution x-ray diffraction (HRXRD). The characterization by PL shows the effect of antimony doping on the emission band intensity attributed to reduction of oxygen vacancies by antimony introduction. The results of XRD showed that antimony source has a Sb2O3 crystalline phase. Reciprocal space maps of doped samples revealed the low dimensional structural modification of single crystal produced by the introduction of antimony. Results indicate that antimony is introduced fully into surface of ZnO and produce low dimensional changes on structure.
Keywords
II-VI semiconductors; X-ray diffraction; antimony; oxidation; photoluminescence; vacancies (crystal); wide band gap semiconductors; zinc compounds; HRXRD; ZnO:Sb; antimony doped zinc oxide single crystal; antimony doping effect; antimony partial oxidation; atomic diffusion; emission band intensity; high resolution X-ray diffraction; optical characterization; oxygen vacancy reduction; photoluminescence; solid source; step process characterization; structural characterization; temperature 1000 degC; time 1 h; time 2 h; zinc oxide single crystal (001); antimony diffusion; high x-ray diffraction; reciprocal space maps; zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering, Computing Science and Automatic Control (CCE), 2013 10th International Conference on
Conference_Location
Mexico City
Print_ISBN
978-1-4799-1460-9
Type
conf
DOI
10.1109/ICEEE.2013.6676086
Filename
6676086
Link To Document