Mutual thermal coupling in SiGe:C HBTs

Author

Weiss, Michael ; Sahoo, Abhaya Kumar ; Maneux, Cristell ; Fregonese, Sebastien ; Zimmer, T.

Author_Institution

Lab. IMS, Univ. de Bordeaux 1, Bordeaux, France

fYear

2013

fDate

2-6 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

This paper studies the mutual thermal coupling in trench isolated SiGe:C HBTs featuring peak f_T and peak f_max of ~300GHz and ~400GHz, respectively. Inter- and intra-device thermal coupling parameters are extracted on specially designed test structures consisting of a five-finger HBT and a five-transistor array. The obtained coupling parameters are implemented in a distributed transistor model that considers self-heating as well as thermal coupling between devices. Very good agreement is achieved between circuit simulations and measurements.

Keywords

Ge-Si alloys; carbon; heterojunction bipolar transistors; SiGe:C; circuit measurements; circuit simulations; distributed transistor model; five-finger heterojunction bipolar transistors; five-transistor array; frequency 300 GHz; frequency 400 GHz; interdevice thermal coupling parameters; intra-device thermal coupling parameters; mutual thermal coupling; self-heating; trench isolated HBT; Electrothermal effects; Heterojunction bipolar transistors; Inter-device; Intra-device; Mutual coupling; Semiconductor device measurement; Silicon germanium; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Technology and Devices (SBMicro), 2013 Symposium on

Conference_Location

Curitiba

Print_ISBN

978-1-4799-0516-4

Type

conf

DOI

10.1109/SBMicro.2013.6676131

Filename

6676131