Quantum well infrared photodetector based on a continuum localized state in a “defective” superlattice

We present a quantum well infrared photodetector (QWIP) based on the control of a “defect” in a superlattice. The InGaAs/InAlAs superlattice is lattice matched to an InP substrate and is composed of 11 quantum wells. The central quantum well has a different thickness from its neighbors introducing a defect in the structure. The defect energy level is controlled in a way to enhance both the oscillator strength and the carrier collection. In this work we use two different approaches to simulate the structure and we show the experimental results of the proposed structures.