Fully electron-beam-lithography SOI FinFET

This paper presents, for the first time in Latin America, a triple gate FinFET (also called 3D Transistor) fabrication process using only three lithograph steps. These three steps were done using electron beam lithography (EBL). The EBL allow the definition of the fin width and the transistor channel length without hard mask fabrication. This paper presents the main details about the full process fabrication and also the main electrical characteristics. The transfer and output characteristics are shown for different fin width dimension. The analog performance parameters like output conductance and intrinsic voltage gain are also analyzed and good results (15-20 dB) for the transistor structure/dimensions studied in this paper were obtained.