• DocumentCode
    650141
  • Title

    Low frequency noise in submicron Graded-Channel SOI MOSFETs

  • Author

    Nemer, J.P. ; de Souza, M. ; Flandre, Denis ; Pavanello, Marcelo Antonio

  • Author_Institution
    Electr. Eng. Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil
  • fYear
    2013
  • fDate
    2-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The origin of the low-frequency noise in submicron fully depleted Graded-Channel (GC) SOI MOSFET is investigated in terms of the channel length comparing two different technologies, OKI semiconductors and UCL.
  • Keywords
    MOSFET; noise; silicon-on-insulator; OKI semiconductors; UCL; channel length; low frequency noise; submicron graded-channel SOI MOSFET; SOI; graded channel; low frequency noise; submicron;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
  • Conference_Location
    Curitiba
  • Print_ISBN
    978-1-4799-0516-4
  • Type

    conf

  • DOI
    10.1109/SBMicro.2013.6676173
  • Filename
    6676173
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=650141