Raman study of Nickel-Platinum Silicide formed by RTP process

Author

Cioldin, F.H. ; dos Santos, M.V.P. ; Doi, I. ; Diniz, Jose A. ; Flacker, Alexander ; Rautember, M. ; Teschke, Omar ; Bonugli, L. ; Zambotti, E.A. ; Filho, J.G.

Author_Institution

Sch. of Electr. & Comput. Eng., Univ. of Campinas, Campinas, Brazil

fYear

2013

fDate

2-6 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

Nickel-Platinum Silicide (NiPtSi) layers were formed using a Rapid Thermal Process (RTP) furnace. The metal thin films were deposited by RF Magnetron Sputtering using a Ni(Pt) target (97% Ni and 3% Pt) onto a Si (100) substrate. The silicidation of the samples were performed at temperature ranged from 450°C to 900°C. Raman spectroscopy was used to study the vibrational modes and the phases of the obtained NiSi layers. An Atomic Force Microscopy (AFM) and Four Point probe were used to investigate the quality of the layer´s surface and its sheet resistance. The exhibited results of large thermal stability window and low sheet resistance of 1~2.5 O/sqr indicate good quality of the obtained silicide layer.

Keywords

Raman spectra; atomic force microscopy; nickel compounds; platinum compounds; rapid thermal processing; sputter deposition; thermal stability; vibrational modes; AFM; NiPtSi; RF magnetron sputtering; RTP process; Raman spectroscopy; Si; atomic force microscopy; four point probe; nickel-platinum silicide layers; rapid thermal process furnace; sheet resistance; temperature 450 degC to 900 degC; thermal stability; vibrational modes; Contacts; Metal; Nickel Silicide; RF Sputtering; Raman; Sheet Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Technology and Devices (SBMicro), 2013 Symposium on

Conference_Location

Curitiba

Print_ISBN

978-1-4799-0516-4

Type

conf

DOI

10.1109/SBMicro.2013.6676175

Filename

6676175