Title :
Growth of ZnO nanowires and microbeam lithography for field emission applications
Author :
Oliveira, Joao W. L. ; Cauduro, Andre L. F. ; Baptista, D.L.
Author_Institution :
Inst. de Fis., Univ. Fed. do Rio Grande do Sul, Porto Alegre, Brazil
Abstract :
Vertically aligned ZnO nanowire arrays were grown on Si substrates using the vapor-liquid-solid mechanism and ion microbeam lithography. Field emission experiments using the ZnO arrays were conducted in high-vacuum conditions. The samples presented relevant field emission behavior reaching emission currents up to 23 μA and turn-on electric field of ~8Vμm-1. The non-linearity of the Fowler-Nordheim plots also strongly indicates the existence of emitters with different geometric characteristics.
Keywords :
II-VI semiconductors; elemental semiconductors; field emission; ion beam lithography; nanowires; silicon; zinc compounds; Fowler-Nordheim plots; Si; ZnO; emission currents; field emission applications; geometric characteristics; high-vacuum conditions; ion microbeam lithography; turn-on electric field; vapor-liquid-solid mechanism; vertically aligned nanowire arrays; ZnO; fiel-demission; ion-beam lithography; nanowires;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
DOI :
10.1109/SBMicro.2013.6676176
