Growth of ZnO nanowires and microbeam lithography for field emission applications

Author

Oliveira, Joao W. L. ; Cauduro, Andre L. F. ; Baptista, D.L.

Author_Institution

Inst. de Fis., Univ. Fed. do Rio Grande do Sul, Porto Alegre, Brazil

fYear

2013

fDate

2-6 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

Vertically aligned ZnO nanowire arrays were grown on Si substrates using the vapor-liquid-solid mechanism and ion microbeam lithography. Field emission experiments using the ZnO arrays were conducted in high-vacuum conditions. The samples presented relevant field emission behavior reaching emission currents up to 23 μA and turn-on electric field of ~8Vμm^-1. The non-linearity of the Fowler-Nordheim plots also strongly indicates the existence of emitters with different geometric characteristics.

Keywords

II-VI semiconductors; elemental semiconductors; field emission; ion beam lithography; nanowires; silicon; zinc compounds; Fowler-Nordheim plots; Si; ZnO; emission currents; field emission applications; geometric characteristics; high-vacuum conditions; ion microbeam lithography; turn-on electric field; vapor-liquid-solid mechanism; vertically aligned nanowire arrays; ZnO; fiel-demission; ion-beam lithography; nanowires;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Technology and Devices (SBMicro), 2013 Symposium on

Conference_Location

Curitiba

Print_ISBN

978-1-4799-0516-4

Type

conf

DOI

10.1109/SBMicro.2013.6676176

Filename

6676176