• DocumentCode
    65055
  • Title

    Reflection Optimization for Alternative Thin-Film Photovoltaics

  • Author

    Mann, Jonathan ; Li, Jian ; Repins, Ingrid ; Ramanathan, Kannan ; Glynn, Stephen ; DeHart, Clay ; Noufi, Rommel

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO, USA
  • Volume
    3
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    472
  • Lastpage
    475
  • Abstract
    The recent improvements in efficiencies for kesterite (copper zinc tin selenide, CZTS) devices warrant an investigation into how the kesterite device stack can best be capped to minimize losses due to reflection. Additionally, ongoing efforts to replace the cadmium sulfide (CdS) layer in copper indium gallium selenide (CIGS)-based devices, most notably with zinc sulfide (ZnS), need to be accompanied by a similar investigation into how to best finish a CIGS/ZnS stack to minimize reflection losses. An optical analysis of how CZTS/CdS and CIGS/ZnS devices reflect light has been performed for the purpose of optimizing the transparent conducting oxide and antireflection layers for each stack. This research addresses what is similar and what is different between the alternative stacks and the routine CIGS/CdS stack and how to best reduce the reflection losses for each situation.
  • Keywords
    copper compounds; gallium compounds; indium compounds; photovoltaic cells; reflectivity; ternary semiconductors; tin compounds; zinc compounds; CuInGaSe-CdS; CuZnSnSe-CdS; ZnS; alternative thin film photovoltaics; antireflection layer; copper indium gallium selenide; copper zinc tin selenide; kesterite device stack; reflection optimization; transparent conducting oxide; zinc sulfide; Materials; Optical buffering; Optimization; Rough surfaces; Standards; Surface roughness; Zinc; Cadmium sulfide (CdS); copper indium gallium selenide (CIGS); copper zinc tin selenide (CZTS); reflection; zinc sulfide (ZnS);
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2012.2224321
  • Filename
    6342889