GaN-based multiple quantum well light-emitting-diodes employing nanotechnology for photon management

Author

Yu-Hsuan Hsiao ; Meng-Lin Tsai ; Jr-Hau He

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2013

fDate

6-11 Oct. 2013

Firstpage

1

Lastpage

7

Abstract

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting-diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white light devices. In this review we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced as well as the fabrication techniques.

Keywords

III-V semiconductors; gallium compounds; light emitting diodes; nanofabrication; nanostructured materials; semiconductor quantum wells; wide band gap semiconductors; GaN; GaN-based multiple quantum well; LEDs; fabrication techniques; light extraction enhancement; light-emitting-diodes; nanostructures; nanotechnology; photon management; radiation pattern control; strain relaxation; white light devices; Epitaxial growth; Fabrication; Gallium nitride; Light emitting diodes; Photonics; Quantum well devices; GaN; Light emitting diode; multiple quantum well; nanostructure;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 2013 IEEE

Conference_Location

Lake Buena Vista, FL

ISSN

0197-2618

Type

conf

DOI

10.1109/IAS.2013.6682537

Filename

6682537