Slotted Hybrid III–V/Silicon Single-Mode Laser

Author

Yejin Zhang ; Hailing Wang ; Hongwei Qu ; Siriguleng Zhang ; Wanhua Zheng

Author_Institution

State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China

Volume

25

Issue

7

fYear

2013

fDate

1-Apr-13

Firstpage

655

Lastpage

658

Abstract

In this letter, a III-V/silicon hybrid single-mode laser operating at L band for photonic integrated circuits is presented. The AlGaInAs gain structure is bonded onto a patterned silicon-on insulator wafer directly. The novel mode-selection mechanism based on a slotted silicon waveguide is applied, which only needs i-line projection photolithography in the whole fabrication process. At room temperature, we obtain 0.85 and 3.5 mW output power in continuous-wave and pulse-wave regimes, respectively. The side-mode suppression ratio of larger than 25 dB is obtained from experiments.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; integrated optics; laser modes; optical fabrication; optical waveguides; photolithography; semiconductor lasers; silicon; silicon-on-insulator; AlGaInAs-Si; L band; continuous wave regime; fabrication process; gain structure; i-line projection photolithography; photonic integrated circuit; power 0.85 mW; power 3.5 mW; pulse wave regime; side mode suppression; silicon-on-insulator wafer; slotted hybrid single-mode laser; temperature 293 K to 298 K; Distributed feedback devices; Laser feedback; Lithography; Optical waveguides; Semiconductor lasers; Silicon; Waveguide lasers; Hybrid silicon laser; photonic integrated circuits; side-mode suppression ratio; single-mode laser;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2248082

Filename

6468068