Title :
Analytical Modeling of IGBTs: Challenges and Solutions
Author :
Baliga, B. Jayant
Author_Institution :
Dept. Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
With the availability of advanced computing capability, it is fashionable to analyze and design insulated-gate bipolar transistors (IGBTs) using sophisticated 2-D and 3-D numerical simulation tools. However, analytical modeling of IGBTs allows a deeper understanding of the physics of operation, which can foster innovation. This paper reviews 1-D analytical models developed for the IGBT on-state characteristics, switching behavior, and safe operating area for symmetric (nonpunchthrough) and asymmetric (punchthrough) devices.
Keywords :
insulated gate bipolar transistors; numerical analysis; semiconductor device models; 2D numerical simulation tools; 3D numerical simulation tools; IGBT analytical modeling; IGBT on-state characteristics; asymmetric devices; insulated-gate bipolar transistor design; switching behavior; symmetric devices; Analytical models; Buffer layers; Current density; Doping; Insulated gate bipolar transistors; Junctions; Transistors; Blocking; insulated-gate bipolar transistor (IGBT); modeling; on state; safe operating area; silicon carbide; switching;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2222415
