DocumentCode
654694
Title
Modeling of SAW resonators fabricated on GaN/Si
Author
Stefanescu, A. ; Buiculescu, V. ; Dinescu, Adrian ; Cismaru, A. ; Muller, A. ; Konstantinidis, G. ; Stavrinidis, A. ; Stavrinidis, G.
Author_Institution
IMT-Bucharest, Bucharest, Romania
fYear
2013
fDate
21-23 Oct. 2013
Firstpage
1
Lastpage
4
Abstract
This paper presents new 2D and 3D numerical models for surface acoustic wave resonators (SAW) on GaN/Si substrate, working on frequencies above 5 GHz. The interdigital transducers (IDT) have fingers and interdigit spacings of 200 nm wide. The simulations are compared with experimental results obtained for one port SAW resonators.
Keywords
gallium compounds; interdigital transducers; silicon; surface acoustic wave resonators; 2D numerical model; 3D numerical model; GaN-Si; SAW resonator; interdigit spacing; interdigital transducer; surface acoustic wave resonator; Analytical models; Finite element analysis; Gallium nitride; Integrated circuit modeling; Resonant frequency; Silicon; Surface acoustic waves; FEM modeling; GaN; SAW resonator;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2013 IEEE International Conference on
Conference_Location
Tel Aviv
Type
conf
DOI
10.1109/COMCAS.2013.6685281
Filename
6685281
Link To Document