Quantifying the Complexity of the Chaotic Intensity of an External-Cavity Semiconductor Laser via Sample Entropy

This paper presents detailed numerical investigations of quantifying the complexity of the chaotic intensity obtained from the well-known Lang-Kobayashi model for an external-cavity semiconductor laser (ECSL) using sample entropy (SampEn). We demonstrate that the modified SampEn could be an alternative to quantify the underlying dynamics of an ECSL under the condition that the dimension, radius, and time delay of the delayed vectors are properly selected. The numerical results are supported by the earlier numerical studies using the permutation entropy and Kolmogorov-Sinai entropy. Furthermore, we also confirm that the SampEn shows certain robustness to the additive observational noise.