• DocumentCode
    65524
  • Title

    Total Ionizing Dose Effect on Low On/Off Switching Ratio {\\rm TiO}_{2} Memristive Memories

  • Author

    Yaqing Chi ; Rongrong Liu ; Zhensen Tang ; Ruiqiang Song

  • Author_Institution
    Sch. of Comput., Nat. Univ. of Defense Technol., Changsha, China
  • Volume
    61
  • Issue
    4
  • fYear
    2014
  • fDate
    Aug. 2014
  • Firstpage
    1889
  • Lastpage
    1893
  • Abstract
    The total ionizing dose effect is experimentally investigated on the electrical characteristics of low on/off switching ratio TiO2 memristive memories for the first time. The 60Co γ-ray irradiation reduces the dispersion of the I-V curves, the resistances and the switch voltages, but the degradations of parameters have no impact on the data storage and reading/writing operations, indicating great stability to the irradiation and potential to the space applications. Furthermore, the low on/off switching ratio devices are ideal samples for the investigations of radiation effect on the memristive devices due to their observable parameter variation post the irradiation exposure.
  • Keywords
    integrated memory circuits; radiation effects; titanium compounds; I-V curves; TiO2; data storage; memristive devices; memristive memories; radiation effect; total ionizing dose effect; Electrical resistance measurement; Memristors; Metals; Radiation effects; Resistance; Switches; Voltage measurement; ${rm TiO}_{2}$; Memristive memory; radiation effects; total ionizing dose;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2014.2318298
  • Filename
    6841650