DocumentCode
65524
Title
Total Ionizing Dose Effect on Low On/Off Switching Ratio
Memristive Memories
Author
Yaqing Chi ; Rongrong Liu ; Zhensen Tang ; Ruiqiang Song
Author_Institution
Sch. of Comput., Nat. Univ. of Defense Technol., Changsha, China
Volume
61
Issue
4
fYear
2014
fDate
Aug. 2014
Firstpage
1889
Lastpage
1893
Abstract
The total ionizing dose effect is experimentally investigated on the electrical characteristics of low on/off switching ratio TiO2 memristive memories for the first time. The 60Co γ-ray irradiation reduces the dispersion of the I-V curves, the resistances and the switch voltages, but the degradations of parameters have no impact on the data storage and reading/writing operations, indicating great stability to the irradiation and potential to the space applications. Furthermore, the low on/off switching ratio devices are ideal samples for the investigations of radiation effect on the memristive devices due to their observable parameter variation post the irradiation exposure.
Keywords
integrated memory circuits; radiation effects; titanium compounds; I-V curves; TiO2; data storage; memristive devices; memristive memories; radiation effect; total ionizing dose effect; Electrical resistance measurement; Memristors; Metals; Radiation effects; Resistance; Switches; Voltage measurement; ${rm TiO}_{2}$ ; Memristive memory; radiation effects; total ionizing dose;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2014.2318298
Filename
6841650
Link To Document