Title :
Integrated Passive Device process for high quality factor passive components and modules
Author :
Vaha-Heikkila, T. ; Saijets, Jan ; Holmberg, Jan ; Rantakari, Pekka ; Ronkainen, H. ; Tuovinen, Reijo
Author_Institution :
VTT Tech. Res. Centre of Finland, Espoo, Finland
Abstract :
An Integrated Passive Device (IPD) technology has been developed for high quality factor (Q) passive components for radio frequency (RF) applications. This paper presents the technology, its key building blocks such as inductors, capacitors and transmission lines as well as a diplexer designed for long term evolution (LTE) handset applications. Measured results are presented for an LC-resonator (Q of 140 at 4.2 GHz) to verify the performance of the key elements. Also, a 1.1 mm × 1.7 mm IPD diplexer on high resistivity silicon show measured loss less than 0.5 dB in the mobile phone bands both below 1 GHz and above 1.7 GHz.
Keywords :
LC circuits; Long Term Evolution; capacitors; elemental semiconductors; inductors; microwave circuits; microwave resonators; mobile handsets; modules; passive networks; silicon; IPD technology; LC-resonator; LTE handset application; Long Term Evolution handset application; RF application; Si; capacitor; diplexer; frequency 4.2 GHz; high quality factor passive component; inductor; integrated passive device process; mobile phone band; module; radiofrequency application; transmission line; Capacitors; Inductors; Metals; Q-factor; Radio frequency; Silicon; Transmission line measurements; IPD; MIM-capacitor; diplexer; inductor;
Conference_Titel :
Microwave Conference (EuMC), 2013 European
Conference_Location :
Nuremberg
