Microwave power transfer evaluation at 2.45 GHz using a high-efficiency GaAs HEMT amplifier and rectifier

Author

Ishikawa, Ryo ; Honjo, Kazuhiko

Author_Institution

Univ. of Electro-Commun., Chofu, Japan

fYear

2013

fDate

6-10 Oct. 2013

Firstpage

916

Lastpage

919

Abstract

Microwave power transfer has been evaluated at 2.45GHz by using a high-efficiency InGaAs/GaAs pHEMT amplifier and rectifier. The same type of HEMT and harmonic treatment circuit were used for both the amplifier and the rectifier. Harmonic reactive terminations up to the fifth order were applied to the harmonic treatment circuits to obtain a high-efficiency characteristic. The fabricated amplifier and rectifier delivered a maximum drain efficiency of 78% and a maximum RF-to-DC efficiency of 77% at 2.45 GHz, respectively. In addition, a total DC-to-DC efficiency of 57% for the microwave power transfer via a 0.5-m coaxial cable was obtained by using the fabricated amplifier and rectifier.

Keywords

III-V semiconductors; UHF amplifiers; coaxial cables; gallium arsenide; high electron mobility transistors; indium compounds; microwave power transmission; rectifiers; DC-to-DC efficiency; InGaAs-GaAs; RF-to-DC efficiency; coaxial cable; fabricated amplifier; frequency 2.45 GHz; harmonic reactive terminations; harmonic treatment circuit; pHEMT amplifier; size 0.5 m; HEMTs; Harmonic analysis; Loss measurement; Power system harmonics; Radio frequency; Voltage measurement; Wireless power transmission; amplifier; harmonic treatment; high efficiency; rectifier; transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6686807