DocumentCode :
65588
Title :
Author :
Khalid, Ata ; Li, C. ; Papageogiou, V. ; Dunn, G.M. ; Steer, M.J. ; Thayne, I.G. ; Kuball, M. ; Oxley, C.H. ; Bajo, M. Montes ; Stephen, A. ; Glover, J. ; Cumming, D.R.S.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Volume :
34
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
39
Lastpage :
41
Abstract :
We present the first results of a planar Gunn diode made in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3- μm active channel length, the highest power achieved was approximately -10 dBm at 164 GHz.
Keywords :
Gunn diodes; III-V semiconductors; gallium arsenide; indium compounds; millimetre wave diodes; semiconductor heterojunctions; In0.53Ga0.47As; InP; frequency 164 GHz; gallium compound; indium compound; millimeter-wave source; planar Gunn diode; semiconductor heterojunction; size 1.3 mum; Frequency measurement; Gallium arsenide; Oscillators; Power measurement; Probes; Semiconductor device measurement; Semiconductor diodes; Gallium and indium compounds; Gunn devices; millimeter-wave source; semiconductor heterojunctions;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2224841
Filename :
6352833
Link To Document :
