$\\hbox {In}_{0.53}\\hbox {Ga}_{0.47}\\hbox {As}$ Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz

Author

Khalid, Ata ; Li, C. ; Papageogiou, V. ; Dunn, G.M. ; Steer, M.J. ; Thayne, I.G. ; Kuball, M. ; Oxley, C.H. ; Bajo, M. Montes ; Stephen, A. ; Glover, J. ; Cumming, D.R.S.

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

Volume

34

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

39

Lastpage

41

Abstract

We present the first results of a planar Gunn diode made in In_0.53Ga_0.47As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3- μm active channel length, the highest power achieved was approximately -10 dBm at 164 GHz.

Keywords

Gunn diodes; III-V semiconductors; gallium arsenide; indium compounds; millimetre wave diodes; semiconductor heterojunctions; In_0.53Ga_0.47As; InP; frequency 164 GHz; gallium compound; indium compound; millimeter-wave source; planar Gunn diode; semiconductor heterojunction; size 1.3 mum; Frequency measurement; Gallium arsenide; Oscillators; Power measurement; Probes; Semiconductor device measurement; Semiconductor diodes; Gallium and indium compounds; Gunn devices; millimeter-wave source; semiconductor heterojunctions;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2224841

Filename

6352833