• DocumentCode
    655895
  • Title

    Statistical harmonic load termination analysis of switch-mode power amplifiers employing bandpass-pulse-length modulation

  • Author

    Krause, Stephen ; Maroldt, S. ; Zech, Christian ; Quay, Ruediger ; Hein, M.A.

  • Author_Institution
    Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany
  • fYear
    2013
  • fDate
    6-10 Oct. 2013
  • Firstpage
    1311
  • Lastpage
    1314
  • Abstract
    This paper presents a method to determine optimum load impedances from a statistical analysis of a harmonic load pull simulation for a switch-mode power amplifier fed with a bandpass-pulse-length modulated signal. The variability of the duty cycle caused by the modulation was taken into account. Thereby, the crucial impact of the phase angle of the filter input reflection coefficient on the achievable efficiency is shown. The simulation was carried out for a 0.25μm gate length GaN based current-switching power amplifier. Based on the simulation results, a microstrip line network working as reconstruction filter was designed and fabricated. The demonstrator comprising the switch-mode power amplifier monolithic microwave integrated circuit and reconstruction filter achieved a drain efficiency and RF output power of up to 71.1% and 36.7dBm (4.6 W), respectively, over a frequency range from 870MHz to 930 MHz.
  • Keywords
    III-V semiconductors; band-pass filters; electric impedance; gallium compounds; microstrip lines; microwave integrated circuits; power amplifiers; statistical analysis; wide band gap semiconductors; GaN; RF output power; bandpass-pulse-length modulated signal; current-switching power amplifier; drain efficiency; duty cycle; filter input reflection coefficient; frequency 870 MHz to 930 MHz; gate length; harmonic load pull simulation; microstrip line network; optimum load impedances; phase angle; reconstruction filter; size 0.25 mum; statistical analysis; switch-mode power amplifier monolithic microwave integrated circuit; Frequency modulation; Gallium nitride; Harmonic analysis; Impedance; Microwave circuits; Transistors; GaN; bandpass-RF pulse length modulation; class-S; switch-mode amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2013 European
  • Conference_Location
    Nuremberg
  • Type

    conf

  • Filename
    6686906